The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Mar. 28, 2008
Makoto Kawai, Gunma, JP;
Yoshihiro Kubota, Gunma, JP;
Atsuo Ito, Gunma, JP;
Koichi Tanaka, Gunma, JP;
Yuuji Tobisaka, Gunma, JP;
Shoji Akiyama, Gunma, JP;
Makoto Kawai, Gunma, JP;
Yoshihiro Kubota, Gunma, JP;
Atsuo Ito, Gunma, JP;
Koichi Tanaka, Gunma, JP;
Yuuji Tobisaka, Gunma, JP;
Shoji Akiyama, Gunma, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
Wettability of a PBN material surface with respect to a metal is improved to expand use applications. Hydrogen ions are implanted into a surface of a silicon substrateto form an ion implanted regionat a predetermined depth near a surface of the silicon substrate, and a plasma treatment or an ozone treatment is performed with respect to a main surface of the silicon substratefor the purpose of surface cleaning or surface activation. The main surfaces of the silicon substrateand a PBN substratesubjected to the surface treatment are appressed against each other to be bonded at a room temperature, and an external impact shock is given to the bonded substrate to mechanically delaminate a silicon filmfrom a bulkof the silicon substrate to be transferred. An obtained PBN composite substrateis diced to form a chip having a desired size, and a refractory metal is metallized on the silicon filmside to be connected with a wiring material.