The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Sep. 14, 2007
Jeoung MO Koo, Singapore, SG;
Purakh Raj Verma, Singapore, SG;
Sanford Chu, Singapore, SG;
Chunlin Zhu, Singapore, SG;
Yisuo LI, Singapore, SG;
Jeoung Mo Koo, Singapore, SG;
Purakh Raj Verma, Singapore, SG;
Sanford Chu, Singapore, SG;
Chunlin Zhu, Singapore, SG;
Yisuo Li, Singapore, SG;
Chartered Semiconductor Manufacturing, Ltd, Singapore, SG;
Abstract
A high voltage device includes a substrate with a device region defined thereon. A gate stack is disposed on the substrate in the device region. A channel region is located in the substrate beneath the gate stack, while a first diffusion region is located in the substrate on a first side of the gate stack. A first isolation structure in the substrate, located on the first side of the gate stack, separates the channel and the first diffusion region. The high voltage device also includes a first drift region in the substrate coupling the channel to the first diffusion region, wherein the first drift region comprises a non-uniform depth profile conforming to a profile of the first isolation structure.