The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Apr. 12, 2004
Steven C. Shannon, San Mateo, CA (US);
Dennis S. Grimard, Ann Arbor, MI (US);
Theodoros Panagopoulos, Cupertino, CA (US);
Daniel J. Hoffman, Saratoga, CA (US);
Michael G. Chafin, Santa Clara, CA (US);
Troy S. Detrick, Los Altos, CA (US);
Alexander Paterson, San Jose, CA (US);
Jingbao Liu, Sunnyvale, CA (US);
Taeho Shin, San Jose, CA (US);
Bryan Y. Pu, San Jose, CA (US);
Steven C. Shannon, San Mateo, CA (US);
Dennis S. Grimard, Ann Arbor, MI (US);
Theodoros Panagopoulos, Cupertino, CA (US);
Daniel J. Hoffman, Saratoga, CA (US);
Michael G. Chafin, Santa Clara, CA (US);
Troy S. Detrick, Los Altos, CA (US);
Alexander Paterson, San Jose, CA (US);
Jingbao Liu, Sunnyvale, CA (US);
Taeho Shin, San Jose, CA (US);
Bryan Y. Pu, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.