The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2010

Filed:

Oct. 16, 2008
Applicants:

Douglas L. Keil, Fremont, CA (US);

Lumin LI, Santa Clara, CA (US);

Eric A. Hudson, Berkeley, CA (US);

Reza Sadjadi, Saratoga, CA (US);

Eric H. Lenz, Pleasanton, CA (US);

Rajinder Dhindsa, San Jose, CA (US);

Ji Soo Kim, Pleasanton, CA (US);

Inventors:

Douglas L. Keil, Fremont, CA (US);

Lumin Li, Santa Clara, CA (US);

Eric A. Hudson, Berkeley, CA (US);

Reza Sadjadi, Saratoga, CA (US);

Eric H. Lenz, Pleasanton, CA (US);

Rajinder Dhindsa, San Jose, CA (US);

Ji Soo Kim, Pleasanton, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05H 1/02 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma.


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