The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Jan. 27, 2005
Xiaoyi Chen, Foster City, CA (US);
Michael Grimbergen, Redwood City, CA (US);
Madhavi Chandrachood, Sunnyvale, CA (US);
Jeffrey X. Tran, Fremont, CA (US);
Ajay Kumar, Cupertino, CA (US);
Simon Tam, Milpitas, CA (US);
Ramesh Krishnamurthy, Sunnyvale, CA (US);
Xiaoyi Chen, Foster City, CA (US);
Michael Grimbergen, Redwood City, CA (US);
Madhavi Chandrachood, Sunnyvale, CA (US);
Jeffrey X. Tran, Fremont, CA (US);
Ajay Kumar, Cupertino, CA (US);
Simon Tam, Milpitas, CA (US);
Ramesh Krishnamurthy, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for etching a chromium layer is provided herein. In one embodiment, a method for etching a chromium layer includes providing a filmstack in an etching chamber, the filmstack having a chromium layer partially exposed through a patterned layer, providing at least one halogen containing process gas to a processing chamber, biasing the layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts, and etching the chromium layer through a patterned mask. The method for plasma etching a chromium layer described herein is particularly suitable for fabricating photomasks.