The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Mar. 22, 2006
Timo Mueller, Burghausen, DE;
Wilfried Von Ammon, Hochburg/Ach, AT;
Erich Daub, Emmerting, DE;
Peter Krottenthaler, Simbach, DE;
Klaus Messmann, Burghausen, DE;
Friedrich Passek, Adlkofen, DE;
Reinhold Wahlich, Tittmoning, DE;
Arnold Kuehhorn, Berlin, DE;
Johannes Studener, Cottbus, DE;
Timo Mueller, Burghausen, DE;
Wilfried von Ammon, Hochburg/Ach, AT;
Erich Daub, Emmerting, DE;
Peter Krottenthaler, Simbach, DE;
Klaus Messmann, Burghausen, DE;
Friedrich Passek, Adlkofen, DE;
Reinhold Wahlich, Tittmoning, DE;
Arnold Kuehhorn, Berlin, DE;
Johannes Studener, Cottbus, DE;
Siltronic AG, Munich, DE;
Abstract
A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·10-8·10atoms/cm, an oxygen concentration of 5.2·10-7.5·10atoms/cm, a central thickness BMD density of 3·10-2·10cm, a cumulative length of linear slippages ≦3 cm and a cumulative area of areal slippage regions ≦7 cm, the front surface having <45 nitrogen-induced defects of >0.13 μm LSE in the DNN channel, a layer at least 5 μm thick, in which ≦1·10COPs/cmwith a size of ≧0.09 μm occur, and a BMD-free layer ≧5 μm thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.