The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Mar. 31, 2006
Yun-ren Wang, Tainan, TW;
Ying-wei Yen, Miaoli County, TW;
Chien-hua Lung, Hsinchu County, TW;
Shu-yen Chan, Hsinchu County, TW;
Kuo-tai Huang, Hsinchu, TW;
Yun-Ren Wang, Tainan, TW;
Ying-Wei Yen, Miaoli County, TW;
Chien-Hua Lung, Hsinchu County, TW;
Shu-Yen Chan, Hsinchu County, TW;
Kuo-Tai Huang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a dielectric layer is described. A substrate is provided, and a dielectric layer is formed over the substrate. The dielectric layer is performed with a nitridation process. The dielectric layer is performed with a first annealing process. A first gas used in the first annealing process includes inert gas and oxygen. The first gas has a first partial pressure ratio of inert gas to oxygen. The dielectric layer is performed with the second annealing process. A second gas used in the second annealing includes inert gas and oxygen. The second gas has a second partial pressure ratio of inert gas to oxygen, and the second partial pressure ratio is smaller than the first partial pressure ratio. At least one annealing temperature of the two annealing processes is equal to or greater than 950° C. The invention improves uniformity of nitrogen dopants distributed in dielectric layer.