The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Sep. 18, 2008
Peter Cirigliano, Sunnyvale, CA (US);
Helen Zhu, Fremont, CA (US);
Ji Soo Kim, Pleasanton, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Peter Cirigliano, Sunnyvale, CA (US);
Helen Zhu, Fremont, CA (US);
Ji Soo Kim, Pleasanton, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
An etch layer underlying a patterned photoresist mask is provided. A plurality of sidewall forming processes are performed. Each sidewall forming process comprises depositing a protective layer on the patterned photoresist mask by performing multiple cyclical depositions. Each cyclical deposition involves at least a depositing phase for depositing a deposition layer over surfaces of the patterned photoresist mask and a profile shaping phase for shaping vertical surfaces in the deposition layer. Each sidewall forming process further comprises a breakthrough etch for selectively etching horizontal surfaces of the protective layer with respect to vertical surfaces of the protective layer. Afterwards, the etch layer is etched to form a feature having a critical dimension that is less than the critical dimension of the features in the patterned photoresist mask.