The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2010

Filed:

Sep. 22, 2008
Applicants:

Vladimir M. Segal, Howell, MI (US);

Wuwen Yi, Veradale, WA (US);

Stephane Ferrasse, Veradale, WA (US);

Chi Tse Wu, Veradale, WA (US);

Susan D. Strothers, Spokane, WA (US);

Frank A. Alford, Veradale, WA (US);

William B. Willett, Spokane, WA (US);

Inventors:

Vladimir M. Segal, Howell, MI (US);

Wuwen Yi, Veradale, WA (US);

Stephane Ferrasse, Veradale, WA (US);

Chi tse Wu, Veradale, WA (US);

Susan D. Strothers, Spokane, WA (US);

Frank A. Alford, Veradale, WA (US);

William B. Willett, Spokane, WA (US);

Assignee:

Honeywell International Inc., Morristown, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B22D 17/00 (2006.01); C22F 1/08 (2006.01); C22C 14/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.


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