The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Apr. 22, 2005
Susumu Maeda, Kanagawa, JP;
Takahisa Sugiman, Kanagawa, JP;
Shinya Sadohara, Kanagawa, JP;
Shiro Yoshino, Kanagawa, JP;
Kouzo Nakamura, Kanagawa, JP;
Susumu Maeda, Kanagawa, JP;
Takahisa Sugiman, Kanagawa, JP;
Shinya Sadohara, Kanagawa, JP;
Shiro Yoshino, Kanagawa, JP;
Kouzo Nakamura, Kanagawa, JP;
Sumco Techxiv Corporation, Kanagawa, JP;
Abstract
A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing atmosphere. The heat-treatment method is provided for forming a desired internal defect density distribution by controlling a nitrogen concentration distribution in a depth direction of the silicon wafer for heat-treatment, the method including heat-treating a predetermined silicon wafer used for manufacturing a silicon wafer having a denuded zone in the vicinity of the surface thereof.