The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Sep. 21, 2006
Camelia Rusu, Fremont, CA (US);
Rajinder Dhindsa, San Jose, CA (US);
Eric A. Hudson, Berkeley, CA (US);
Mukund Srinivasan, Fremont, CA (US);
Lumin LI, Santa Clara, CA (US);
Felix Kozakevich, Sunnyvale, CA (US);
Camelia Rusu, Fremont, CA (US);
Rajinder Dhindsa, San Jose, CA (US);
Eric A. Hudson, Berkeley, CA (US);
Mukund Srinivasan, Fremont, CA (US);
Lumin Li, Santa Clara, CA (US);
Felix Kozakevich, Sunnyvale, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.