The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Feb. 13, 2007
Alexander I. Ershov, San Diego, CA (US);
William F. Marx, San Diego, CA (US);
Norbert Bowering, San Diego, CA (US);
Bjorn A. M. Hansson, Bromma, SE;
Oleh Khodykin, San Diego, CA (US);
Igor V. Fomenkov, San Diego, CA (US);
Alexander I. Ershov, San Diego, CA (US);
William F. Marx, San Diego, CA (US);
Norbert Bowering, San Diego, CA (US);
Bjorn A. M. Hansson, Bromma, SE;
Oleh Khodykin, San Diego, CA (US);
Igor V. Fomenkov, San Diego, CA (US);
Cymer, Inc., San Diego, CA (US);
Abstract
Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.