The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Jun. 05, 2009
Fang Wen Tsai, Hsinchu, TW;
Matt Yeh, Hsinchun, TW;
Ming-jun Wang, Taichung County, TW;
Shun Wu Lin, Taichung, TW;
Chi-chun Chen, Kaohsiung, TW;
Zin-chang Wei, Hsin-Chu, TW;
Chyi-shyuan Chern, Taipei, TW;
Fang Wen Tsai, Hsinchu, TW;
Matt Yeh, Hsinchun, TW;
Ming-Jun Wang, Taichung County, TW;
Shun Wu Lin, Taichung, TW;
Chi-Chun Chen, Kaohsiung, TW;
Zin-Chang Wei, Hsin-Chu, TW;
Chyi-Shyuan Chern, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for fabricating a integrated circuit with improved performance is disclosed. The method comprises providing a substrate; forming a hard mask layer over the substrate; forming protected portions and unprotected portions of the hard mask layer; performing a first etching process, a second etching process, and a third etching process on the unprotected portions of the hard mask layer, wherein the first etching process partially removes the unprotected portions of the hard mask layer, the second etching process treats the unprotected portions of the hard mask layer, and the third etching process removes the remaining unprotected portions of the hard mask layer; and performing a fourth etching process to remove the protected portions of the hard mask layer.