The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Aug. 03, 2005
Fumitaka Kume, Annaka, JP;
Tomosuke Yoshida, Annaka, JP;
Ken Aihara, Annaka, JP;
Ryoji Hoshi, Nishigo-mura, JP;
Satoshi Tobe, Annaka, JP;
Naohisa Toda, Annaka, JP;
Fumio Tahara, Annaka, JP;
Fumitaka Kume, Annaka, JP;
Tomosuke Yoshida, Annaka, JP;
Ken Aihara, Annaka, JP;
Ryoji Hoshi, Nishigo-mura, JP;
Satoshi Tobe, Annaka, JP;
Naohisa Toda, Annaka, JP;
Fumio Tahara, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A silicon epitaxial layeris grown in vapor phase on a silicon single crystal substratemanufactured by the Czochralski method, and doped with boron so as to adjust the resistivity to 0.02 Ω·cm or below, oxygen precipitation nucleiare formed in the silicon single crystal substrate, by carrying out annealing at 450° C. to 750° C., in an oxidizing atmosphere, for a duration of time allowing formation of a silicon oxide film only to as thick as 2 nm or below on the silicon epitaxial layeras a result of the annealing, and thus-formed silicon oxide filmis etched as the first cleaning after the low-temperature annealing, using a cleaning solution. By this process, the final residual thickness of the silicon oxide film can be suppressed only to a level equivalent to native oxide film, without relying upon the hydrofluoric acid cleaning.