The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Apr. 02, 2008
Adrien R. Lavoie, Beaverton, OR (US);
John J. Plombon, Portland, OR (US);
Juan E. Dominguez, Hillsboro, OR (US);
Harsono S. Simka, Saratoga, CA (US);
Mansour Moinpour, Saratoga, CA (US);
Adrien R. Lavoie, Beaverton, OR (US);
John J. Plombon, Portland, OR (US);
Juan E. Dominguez, Hillsboro, OR (US);
Harsono S. Simka, Saratoga, CA (US);
Mansour Moinpour, Saratoga, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method for depositing a high-k dielectric material on a semiconductor substrate is disclosed. The method includes applying a chemical bath to a surface of a substrate, rinsing the surface, applying a co-reactant bath to the surface of the substrate, and rinsing the surface. The chemical bath includes a metal precursor which includes at least a hafnium compound, an aluminium compound, a titanium compound, zirconium compound, a scandium compound, a yttrium compound or a lanthanide compound.