The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Nov. 07, 2008
Ludovic Godet, North Reading, MA (US);
George D. Papasouliotis, North Andover, MA (US);
Ziwei Fang, Beverly, MA (US);
Richard Appel, Danvers, MA (US);
Vincent Deno, Gloucester, MA (US);
Vikram Singh, North Andover, MA (US);
Harold M. Persing, Rockport, MA (US);
Ludovic Godet, North Reading, MA (US);
George D. Papasouliotis, North Andover, MA (US);
Ziwei Fang, Beverly, MA (US);
Richard Appel, Danvers, MA (US);
Vincent Deno, Gloucester, MA (US);
Vikram Singh, North Andover, MA (US);
Harold M. Persing, Rockport, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.