The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Mar. 28, 2007
Hiroshi Makino, Kokubunji, JP;
Kenji Tanimoto, Hitachinaka, JP;
Zhaohui Cheng, Tokyo, JP;
Hikaru Koyama, Kodaira, JP;
Hiroshi Makino, Kokubunji, JP;
Kenji Tanimoto, Hitachinaka, JP;
Zhaohui Cheng, Tokyo, JP;
Hikaru Koyama, Kodaira, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
When performing an inspection using a charge control function in a SEM wafer inspection apparatus, acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by 'acceleration voltage−deceleration voltage' and bias voltage determined by 'deceleration voltage−control voltage' do not change. By this means, charge of a wafer can be controlled, while restraining electrostatic lens effect generated near a control electrode. As a result, an inspection using a charge control function at low incident energy and in a wide viewing field can be performed, and a highly sensitive inspection of semiconductor patterns subject to damages due to electron beam irradiation can be realized. Acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change.