The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Mar. 20, 2007
Zhigang Chen, San Jose, CA (US);
Hanyou Chu, Palo Alto, CA (US);
Shifang LI, Pleasanton, CA (US);
Manuel Madriaga, San Jose, CA (US);
Zhigang Chen, San Jose, CA (US);
Hanyou Chu, Palo Alto, CA (US);
Shifang Li, Pleasanton, CA (US);
Manuel Madriaga, San Jose, CA (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A fabrication cluster can be controlled using optical metrology. A fabrication process is performed on a wafer using a fabrication cluster. A photonic nanojet, an optical intensity pattern induced at a shadow-side surface of a dielectric microsphere, is generated. An inspection area on the wafer is scanned with the photonic nanojet. A measurement is obtained of the retroreflected light from the dielectric microsphere as the photonic nanojet scans the inspection area. The existence of a structure in the inspection area is determined with the obtained measurement of the retroreflected light. One or more process parameters of the fabrication cluster is adjusted based on the determination of the existence of the structure in the inspection area.