The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
May. 02, 2008
Kevin Shea, Boise, ID (US);
Brett Busch, Boise, ID (US);
Farrell Good, Meridian, ID (US);
Irina Vasilyeva, Boise, ID (US);
Vishwanath Bhat, Boise, ID (US);
Kevin Shea, Boise, ID (US);
Brett Busch, Boise, ID (US);
Farrell Good, Meridian, ID (US);
Irina Vasilyeva, Boise, ID (US);
Vishwanath Bhat, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.