The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
Oct. 28, 2003
Applicants:
Marko Vehkamäki, Helsinki, FI;
Timo Hatanpää, Helsinki, FI;
Mikko Ritala, Espoo, FI;
Markku Leskelä, Espoo, FI;
Inventors:
Marko Vehkamäki, Helsinki, FI;
Timo Hatanpää, Helsinki, FI;
Mikko Ritala, Espoo, FI;
Markku Leskelä, Espoo, FI;
Assignee:
ASM International N.V., , NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23C 16/40 (2006.01); C23C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process for producing bismuth-containing oxide thin films by Atomic Layer Deposition, including using an organic bismuth compound having at least one silylamido ligand as a source material for the bismuth oxide. Bismuth-containing oxide thin films produced by the preferred embodiments can be used, for example, as ferroelectric or dielectric material in integrated circuits and/or as superconductor materials.