The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Mar. 23, 2007
Daniel C. Edelstein, White Plains, NY (US);
Alexandros Demos, Dublin, CA (US);
Stephen M. Gates, Ossining, NY (US);
Alfred Grill, White Plains, NY (US);
Steven E. Molis, Patterson, NY (US);
VU Ngoc Tran Nguyen, San Jose, CA (US);
Steven Reiter, Santa Clara, CA (US);
Darryl D. Restaino, Modena, NY (US);
Kang Sub Yim, Santa Clara, CA (US);
Daniel C. Edelstein, White Plains, NY (US);
Alexandros Demos, Dublin, CA (US);
Stephen M. Gates, Ossining, NY (US);
Alfred Grill, White Plains, NY (US);
Steven E. Molis, Patterson, NY (US);
Vu Ngoc Tran Nguyen, San Jose, CA (US);
Steven Reiter, Santa Clara, CA (US);
Darryl D. Restaino, Modena, NY (US);
Kang Sub Yim, Santa Clara, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.