The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Jun. 09, 2005
Ying-wei Yen, Miao-Li Hsien, TW;
Yun-ren Wang, Tai-Nan, TW;
Shu-yen Chan, Hsin-Chu Hsien, TW;
Chen-kuo Chiang, Tainan Hsien, TW;
Chung-yih Chen, Tai-Nan, TW;
Ying-Wei Yen, Miao-Li Hsien, TW;
Yun-Ren Wang, Tai-Nan, TW;
Shu-Yen Chan, Hsin-Chu Hsien, TW;
Chen-Kuo Chiang, Tainan Hsien, TW;
Chung-Yih Chen, Tai-Nan, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for switching decoupled plasma nitridation (DPN) processes of different doses, which is able to decrease the switching time, is provided. According to the method, a dummy wafer is inserted into a chamber, a process gas introduced is ignited into plasma, and then a DPN doping process of the next dose is performed on the dummy wafer. The nitrogen concentration of the chamber is thus adjusted rapidly to switch to the DPN process of the next dose. In addition, after several cycles of the above steps are repeated, a dummy wafer is inserted into the chamber, and a complete DPN process of the next dose is performed on the dummy wafer. This process is performed several times before switching to the next DPN process.