The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2009
Filed:
Dec. 01, 2005
Michael L. Hattendorf, Beaverton, OR (US);
Justin K. Brask, Portland, OR (US);
Justin S. Sandford, Tigard, OR (US);
Jack Kavalieros, Portland, OR (US);
Matthew V. Metz, Hillsboro, OR (US);
Michael L. Hattendorf, Beaverton, OR (US);
Justin K. Brask, Portland, OR (US);
Justin S. Sandford, Tigard, OR (US);
Jack Kavalieros, Portland, OR (US);
Matthew V. Metz, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments of the invention provide a device with a reverse-tapered gate electrode and a gate dielectric layer with a length close to that of the gate length. In an embodiment, this may be done by altering portions of a blanket dielectric layer with one or more angled ion implants, then removing the altered portions of the blanket dielectric layer.