The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Aug. 12, 2005
Applicants:
Jen Chieh Chang, Hsinchu, TW;
Shih-chi Lai, Hsinchu, TW;
Yi Fu Chung, Hsinchu, TW;
Tun-fu Hung, Hsinchu, TW;
Inventors:
Jen Chieh Chang, Hsinchu, TW;
Shih-Chi Lai, Hsinchu, TW;
Yi Fu Chung, Hsinchu, TW;
Tun-Fu Hung, Hsinchu, TW;
Assignee:
Mosel Vitelic, Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A fabrication method for forming a gate structure through an amorphous silicon layer includes providing a substrate layer, forming an amorphous silicon layer of a selected thickness on the substrate layer at a reaction temperature between about 520° C. and 560° C., and forming a doped amorphous silicon layer in a upper portion of the amorphous silicon layer at a reaction temperature between about 520° C. and 560° C.