The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Mar. 22, 2005
Atsuki Fukazawa, Tama, JP;
Kiyoto Itoh, Tsuruoka, JP;
Tsunayuki Kimura, Tama, JP;
Nobuo Matsuki, Tama, JP;
Atsuki Fukazawa, Tama, JP;
Kiyoto Itoh, Tsuruoka, JP;
Tsunayuki Kimura, Tama, JP;
Nobuo Matsuki, Tama, JP;
ASM Japan K.K., Tokyo, JP;
Abstract
A method of forming a film having a low dielectric constant, comprises the steps of: placing a substrate between an upper electrode and a lower electrode inside a reaction chamber, introducing a silicon-containing hydrocarbon compound source gas, an additive gas, and an inert gas into a space between the upper and lower electrodes by controlling a gas flow ratio, generating a plasma by applying RF power to the space between the upper and lower electrodes in a state in which an interval between the upper electrode and the substrate is narrower in the vicinity of a center of the substrate than that in the vicinity of its periphery, and forming a film having a low dielectric constant on the substrate at a deposition rate of less than approx. 790 nm/min by controlling a flow rate of the process gas.