The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2009
Filed:
Sep. 30, 2005
Adrien R. Lavoie, St. Helens, OR (US);
Valery M. Dubin, Portland, OR (US);
Juan E. Dominguez, Hillsboro, OR (US);
Kevin P. O'brien, Portland, OR (US);
Steven W. Johnston, Portland, OR (US);
John D. Peck, West Seneca, NY (US);
David M. Thompson, East Amherst, NY (US);
David W. Peters, Tonawanda, NY (US);
Adrien R. Lavoie, St. Helens, OR (US);
Valery M. Dubin, Portland, OR (US);
Juan E. Dominguez, Hillsboro, OR (US);
Kevin P. O'Brien, Portland, OR (US);
Steven W. Johnston, Portland, OR (US);
John D. Peck, West Seneca, NY (US);
David M. Thompson, East Amherst, NY (US);
David W. Peters, Tonawanda, NY (US);
Intel Corporation, Santaclara, CA (US);
Abstract
A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.