The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2009
Filed:
Sep. 03, 2004
Xuelong Shi, San Jose, CA (US);
Jang Fung Chen, Cupertino, CA (US);
Thomas Laidig, Point Richmond, CA (US);
Kurt E. Wampler, Sunnyvale, CA (US);
Douglas Van Den Broeke, Sunnyvale, CA (US);
Xuelong Shi, San Jose, CA (US);
Jang Fung Chen, Cupertino, CA (US);
Thomas Laidig, Point Richmond, CA (US);
Kurt E. Wampler, Sunnyvale, CA (US);
Douglas Van Den Broeke, Sunnyvale, CA (US);
ASML Masktools B.V., Ah Veldhoven, NL;
Abstract
A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.