The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Mar. 08, 2007
Chong Kwang Chang, Kangwon, KR;
Wan Jae Park, Kyunggi, KR;
Len Yuan Tsou, New York City, NY (US);
Haoren Zhuang, Hopewell Junction, NY (US);
Matthias Lipinsky, Poughkeepsie, NY (US);
Shailendra Mishra, Singapore, SG;
Chong Kwang Chang, Kangwon, KR;
Wan Jae Park, Kyunggi, KR;
Len Yuan Tsou, New York City, NY (US);
Haoren Zhuang, Hopewell Junction, NY (US);
Matthias Lipinsky, Poughkeepsie, NY (US);
Shailendra Mishra, Singapore, SG;
Samsung Electronics Co., Ltd., , KR;
International Business Machines Corporation, Armonk, NY (US);
Infineon Technologies AG, , DE;
Chartered Semiconductor Manufacturing, Ltd., Singapore, SG;
Abstract
Methods of forming integrated circuit devices include steps to selectively widen portions of a mask pattern extending adjacent an outer edge of a semiconductor wafer. These steps to selectively widen portions of the mask pattern are performed so that more uniform center-to-edge critical dimensions (CD) can be achieved when the mask pattern is used to support photolithographically patterning of underlying layers (e.g., insulating layers, antireflective coatings, etc.).