The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2009
Filed:
Mar. 15, 2006
Ziwei Fang, Beverly, MA (US);
Richard Appel, Danvers, MA (US);
Vincent Deno, Gloucester, MA (US);
Vikram Singh, North Andover, MA (US);
Harold M. Persing, Rockport, MA (US);
Ziwei Fang, Beverly, MA (US);
Richard Appel, Danvers, MA (US);
Vincent Deno, Gloucester, MA (US);
Vikram Singh, North Andover, MA (US);
Harold M. Persing, Rockport, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems.