The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Nov. 02, 2005
Juan E. Dominquez, Hillsboro, OR (US);
Adrien R. Lavoie, Beaverton, OR (US);
Harsono S. Simka, Saratoga, CA (US);
John Plombon, Portland, OR (US);
David M. Thompson, East Amherst, NY (US);
John D. Peck, West Seneca, NY (US);
Juan E. Dominquez, Hillsboro, OR (US);
Adrien R. Lavoie, Beaverton, OR (US);
Harsono S. Simka, Saratoga, CA (US);
John Plombon, Portland, OR (US);
David M. Thompson, East Amherst, NY (US);
John D. Peck, West Seneca, NY (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method comprising introducing an organometallic precursor according to a first set of conditions in the presence of a substrate; introducing the organometallic precursor according to a different second set of conditions in the presence of the substrate; and forming a layer comprising a moiety of the organometallic precursor on the substrate according to an atomic layer deposition process. A system comprising a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor comprising a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures formed in a plurality of dielectric layers formed on the substrate and each of the plurality of interconnect structures separated from the plurality of dielectric layers by a barrier layer formed according to an atomic layer deposition process.