The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Sep. 05, 2006
Jigish D. Trivedi, Boise, ID (US);
Robert D. Patraw, Boise, ID (US);
Kevin L. Beaman, Boise, ID (US);
John A. Smythe, Iii, Boise, ID (US);
Jigish D. Trivedi, Boise, ID (US);
Robert D. Patraw, Boise, ID (US);
Kevin L. Beaman, Boise, ID (US);
John A. Smythe, III, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method of depositing dielectric material into sub-micron spaces and resultant structures is provided. After a trench is etched in the surface of a wafer, a silicon nitride barrier is deposited into the trench. The silicon nitride layer has a high nitrogen content near the trench walls to protect the walls. The silicon nitride layer further from the trench walls has a low nitrogen content and a high silicon content, to allow improved adhesion. The trench is then filled with a spin-on precursor. A densification or reaction process is then applied to convert the spin-on material into an insulator. The resulting trench has a well-adhered insulator which helps the insulating properties of the trench.