The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2009
Filed:
Mar. 30, 2005
Masanobu Igeta, Fishkill, NY (US);
Cory Wajda, Sand Lake, NY (US);
David L. O'meara, Poughkeepsie, NY (US);
Kristen Scheer, Milton, NY (US);
Toshihara Eurakawa, Essex Junction, VT (US);
Masanobu Igeta, Fishkill, NY (US);
Cory Wajda, Sand Lake, NY (US);
David L. O'Meara, Poughkeepsie, NY (US);
Kristen Scheer, Milton, NY (US);
Toshihara Eurakawa, Essex Junction, VT (US);
Tokyo Electron, Ltd., Tokyo, JP;
International Business Machines Corporation (“IBM”), Armonk, NY (US);
Abstract
The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film on the surface. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits to nitridate the oxide film and form the oxynitride film.