The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Apr. 25, 2005
Chien-hao Chen, Chuangwei Township, TW;
Chun-feng Nieh, Baoshan Township, TW;
Karen Mai, Jhonghe, TW;
Tze-liang Lee, Hsinchu, TW;
Chien-Hao Chen, Chuangwei Township, TW;
Chun-Feng Nieh, Baoshan Township, TW;
Karen Mai, Jhonghe, TW;
Tze-Liang Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device having well-defined profiles is disclosed. A p-type pocket/halo region is preferably formed along a channel-side border of the heavily doped source/drain region to neutralize diffused n-type elements. A diffusion-retarding region is formed to retard diffusion for both p-type and n-type impurities by substantially overlapping or extending beyond the p-type pocket/halo region and the N+ S/D region at least on the channel side.