The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Jun. 22, 2005
Andrew E Horch, Seattle, WA (US);
Hyun-jin Cho, Palo Alto, CA (US);
Farid Nemati, Redwood City, CA (US);
Scott Robins, San Jose, CA (US);
Rajesh N. Gupta, Mountain View, CA (US);
Kevin J. Yang, Santa Clara, CA (US);
Andrew E Horch, Seattle, WA (US);
Hyun-Jin Cho, Palo Alto, CA (US);
Farid Nemati, Redwood City, CA (US);
Scott Robins, San Jose, CA (US);
Rajesh N. Gupta, Mountain View, CA (US);
Kevin J. Yang, Santa Clara, CA (US);
T-RAM Semiconductor, Inc., Milpitas, CA (US);
Abstract
A method of fabricating a thyristor-based memory may include forming different opposite conductivity-type regions in silicon for defining a thyristor and an access device in series relationship. An activation anneal may activate dopants previously implanted for the different regions. A damaging implant of germanium or xenon or argon may be directed into select regions of the silicon including at least one p-n junction region for the access device and the thyristor. A re-crystallization anneal may then be performed to re-crystallize at least some of the damaged lattice structure resulting from the damaging implant. The re-crystallization anneal may use a temperature less than that of the previous activation anneal.