The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Feb. 17, 2006
Marie Angelopoulos, Cortlandt Manor, NY (US);
Katherina E. Babich, Chappaqua, NY (US);
Sean D. Burns, Hopewell Junction, NY (US);
Richard A. Conti, Katonah, NY (US);
Allen H. Gabor, Katonah, NY (US);
Scott D. Halle, Hopewell Junction, NY (US);
Arpan P. Mahorowala, Bronxville, NY (US);
Dirk Pfeiffer, Dobbs Ferry, NY (US);
Marie Angelopoulos, Cortlandt Manor, NY (US);
Katherina E. Babich, Chappaqua, NY (US);
Sean D. Burns, Hopewell Junction, NY (US);
Richard A. Conti, Katonah, NY (US);
Allen H. Gabor, Katonah, NY (US);
Scott D. Halle, Hopewell Junction, NY (US);
Arpan P. Mahorowala, Bronxville, NY (US);
Dirk Pfeiffer, Dobbs Ferry, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.