The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Jul. 01, 2004
Osamu Kusumoto, Nara, JP;
Makoto Kitabatake, Nara, JP;
Masao Uchida, Osaka, JP;
Kunimasa Takahashi, Osaka, JP;
Kenya Yamashita, Osaka, JP;
Masahiro Hagio, Shiga, JP;
Kazuyuki Sawada, Osaka, JP;
Osamu Kusumoto, Nara, JP;
Makoto Kitabatake, Nara, JP;
Masao Uchida, Osaka, JP;
Kunimasa Takahashi, Osaka, JP;
Kenya Yamashita, Osaka, JP;
Masahiro Hagio, Shiga, JP;
Kazuyuki Sawada, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.