Company Filing History:
Years Active: 2009-2010
Title: Masahiro Hagio: Innovator in Semiconductor Technology
Introduction
Masahiro Hagio is a prominent inventor based in Shiga, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced semiconductor devices. With a total of 2 patents, his work has had a notable impact on the industry.
Latest Patents
Hagio's latest patent focuses on a semiconductor device and the method for fabricating the same. The process involves ion implantation to form a p-well region and a source region in parts of a high resistance silicon carbide (SiC) layer on a SiC substrate. A carbon film is deposited over the substrate, and annealing is performed to activate the implanted dopant ions. Afterward, the carbon film is removed, resulting in a smooth surface with minimal surface roughness caused by the annealing process. If a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. This innovation allows for the creation of a Metal-Insulator-Semiconductor Field-Effect Transistor (MISFET) with a high current drive capability.
Career Highlights
Masahiro Hagio is currently employed at Panasonic Corporation, where he continues to advance semiconductor technology. His work has been instrumental in enhancing the performance and efficiency of semiconductor devices.
Collaborations
Hagio has collaborated with notable colleagues, including Osamu Kusumoto and Makoto Kitabatake. Their combined expertise has contributed to the successful development of innovative semiconductor solutions.
Conclusion
Masahiro Hagio's contributions to semiconductor technology exemplify the importance of innovation in this field. His patents and ongoing work at Panasonic Corporation highlight his role as a key figure in advancing semiconductor devices.