The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Apr. 24, 2006
Fang Wen Tsai, Hsinchu, TW;
I-i Chen, Hsinchu, TW;
Zhen-cheng Wu, Hsinchu, TW;
Chih-lung Lin, Taipei, TW;
Tien-i Bao, Hsin-Chu, TW;
Shwang-ming Jeng, Hsin-Chu, TW;
Chen-hua Yu, Hsin-Chu, TW;
Fang Wen Tsai, Hsinchu, TW;
I-I Chen, Hsinchu, TW;
Zhen-Cheng Wu, Hsinchu, TW;
Chih-Lung Lin, Taipei, TW;
Tien-I Bao, Hsin-Chu, TW;
Shwang-Ming Jeng, Hsin-Chu, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure having improved adhesion between a low-k dielectric layer and the underlying layer and a method for forming the same are provided. The semiconductor substrate includes a dielectric layer over a semiconductor substrate, an adhesion layer on the dielectric layer wherein the adhesion layer comprises a transition sub-layer over an initial sub-layer, and wherein the transition sub-layer has a composition that gradually changes from a lower portion to an upper portion. A low-k dielectric layer is formed on the adhesion layer. Damascene openings are formed in the low-k dielectric layer. A top portion of the transition sub-layer has a composition substantially similar to a composition of the low-k dielectric layer. A bottom portion of the transition sub-layer has a composition substantially similar to a composition of the initial sub-layer.