The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Oct. 31, 2007
Lei Zhong, Parker, TX (US);
John Fretwell, Fort Worth, TX (US);
Kara Lee Sherman, Santa Clara, CA (US);
Robert William Fiordalice, Los Altos Hills, CA (US);
Lei Zhong, Parker, TX (US);
John Fretwell, Fort Worth, TX (US);
Kara Lee Sherman, Santa Clara, CA (US);
Robert William Fiordalice, Los Altos Hills, CA (US);
KLA-Tencor Technologies Corporation, Milpitas, CA (US);
Abstract
One embodiment relates to a method for detecting defects in circuitry formed on a semiconductor substrate. A first scan of said circuitry is performed by scanning a primary electron beam in a first scan direction relative to said circuitry, and secondary electrons emitted during the first scan are detected so as to form a first voltage-contrast image. A second scan of said circuitry is performed by scanning the primary electron beam in a second scan direction relative to said circuitry, and secondary electrons emitted during the second scan are detected so as to form a second voltage-contrast image. The second scan direction is non-parallel to the first scan direction. The first and second voltage-contrast images are then compared to detect electrically-active defects. Other embodiments, aspects and features are also disclosed.