The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2008
Filed:
Jul. 11, 2005
Takeshi Akatsu, St. Nazaire les Eymes, FR;
Nicolas Daval, Grenoble, FR;
Nguyet-phuong Nguyen, Grenoble, FR;
Olivier Rayssac, Grenoble, FR;
Konstantin Bourdelle, Crolles, FR;
Takeshi Akatsu, St. Nazaire les Eymes, FR;
Nicolas Daval, Grenoble, FR;
Nguyet-Phuong Nguyen, Grenoble, FR;
Olivier Rayssac, Grenoble, FR;
Konstantin Bourdelle, Crolles, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
Methods for forming a semiconductor structure are described. In an embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface; coimplanting two different atomic species through the free surface of the second layer to form a zone of weakness zone in the first layer; bonding the free surface of the second layer to a host wafer; and supplying energy to detach at the zone of weakness a semiconductor structure comprising the host wafer, the second layer and a portion of the first layer. Advantageously, the donor wafer includes a SiGe layer, and the co-implantation of atomic species is conducted according to implantation parameters adapted to enable a first species to form the zone of weakness in the SiGe layer, and to enable a second species to provide a concentration peak located beneath the zone of weakness in the donor wafer to thus minimize surface roughness resulting from detachment at the zone of weakness.