The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Dec. 01, 2005
Yao-hui Huang, Hsinchu, TW;
Tung-li Lee, Jhubei, TW;
Chih-hao Lin, Hsinchu, TW;
Yen-fei Lin, Donggang Township, Pingtung County, TW;
James Sun, Taipei, TW;
Chen Pu-fang, Hsinchu, TW;
David Huang, Lujhou, TW;
Yao-Hui Huang, Hsinchu, TW;
Tung-Li Lee, Jhubei, TW;
Chih-Hao Lin, Hsinchu, TW;
Yen-Fei Lin, Donggang Township, Pingtung County, TW;
James Sun, Taipei, TW;
Chen Pu-Fang, Hsinchu, TW;
David Huang, Lujhou, TW;
Abstract
The present invention relates to a method for increasing the grain size of a polysilicon layer, which includes exposing a silicon oxide wafer in a deposition chamber to an amount, effective for the purpose, of nitrogen at a flow rate of at least about 240 standard liters per minute (slm). The instant invention further relates to a method for inhibiting the formation of a polysilicon seed in a furnace, which includes the treatment as noted above. The invention also relates to a method for forming a polysilicon layer, including: forming a silicon oxide layer on a substrate, the silicon oxide layer having a plurality of oxygen molecules therein; exposing the silicon oxide layer to a predetermined amount of nitrogen-containing gas in a furnace, whereby a plurality of nitrogen molecules in the nitrogen-containing gas replaces at least part of the oxygen molecules in the silicon oxide layer; and forming a polysilicon layer on the silicon oxide layer.