Electron beam apparatus, a device manufacturing method using the same apparatus, a pattern evaluation method, a device manufacturing method using the same method, and a resist pattern or processed wafer evaluation method

Abstract

An object of the present invention is to provide an electron beam apparatus, in which a plurality of electron beams, e.g., four electron beams, is produced for one optical axis with a relatively high current achieved for each electron beam. Provided is an electron beam apparatus comprising: an electron beam emitter () having an electron gun (), said electron gun () disposed along an optical axis () and operable to emit a plurality of off-axis electron beams along a direction defined by a certain angle with respect to the optical axis (); a plurality of apertures () disposed at a location offset from the optical axis (); and an electromagnetic lens () for forming a magnetic field between the electron gun () and the apertures () to control the plurality of off-axis electron beams emitted from the electron gun () so that the plurality of off-axis electron beams passes through the apertures ().