The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2008

Filed:

Oct. 07, 2004
Applicants:

Hiroshi Shinriki, Tama, JP;

Baiei Kawano, Tama, JP;

Akira Shimizu, Tama, JP;

Inventors:

Hiroshi Shinriki, Tama, JP;

Baiei Kawano, Tama, JP;

Akira Shimizu, Tama, JP;

Assignee:

ASM Japan K.K., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the placing portion for supplying a gas onto a substrate surface, a gas-supply port for introducing the gas into the gas-dispersion guide, a gas-dispersion plate disposed on the side of the substrate of the gas-dispersion guide and having multiple gas-discharge pores, a first exhaust port for exhausting, downstream of the gas-dispersion plate, the gas supplied onto the substrate surface from the gas-dispersion plate, and a second exhaust port for exhausting, upstream of the gas-dispersion plate, a gas inside the gas-dispersion guide via a space between the gas-dispersion guide and the gas-dispersion plate.

Published as:
KR20050034567A; JP2005113268A; US2005208217A1; US7408225B2;

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