The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
May. 30, 2006
Gin Jei Wang, Changhua, TW;
Chao-hsien Peng, Hsinchu City, TW;
Chii-ming Wu, Hsinchu Hsien, TW;
Chih-wei Chang, Hsinchu Hsien, TW;
Shau-lin Shue, Hsinchu City, TW;
Gin Jei Wang, Changhua, TW;
Chao-Hsien Peng, Hsinchu City, TW;
Chii-Ming Wu, Hsinchu Hsien, TW;
Chih-Wei Chang, Hsinchu Hsien, TW;
Shau-Lin Shue, Hsinchu City, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for forming a semiconductor device is described. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN barrier is conformably formed in the opening, at a thickness less than 20 Å. A copper layer is formed over the atomic layer deposited (ALD) TaN barrier to fill the opening.