The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Nov. 14, 2002
Aaron Scott Lukas, Lansdale, PA (US);
Mark Leonard O'neill, Allentown, PA (US);
Mark Daniel Bitner, Nazareth, PA (US);
Jean Louise Vincent, Bethlehem, PA (US);
Raymond Nicholas Vrtis, Allentown, PA (US);
Eugene Joseph Karwacki, Jr., Orefield, PA (US);
Aaron Scott Lukas, Lansdale, PA (US);
Mark Leonard O'Neill, Allentown, PA (US);
Mark Daniel Bitner, Nazareth, PA (US);
Jean Louise Vincent, Bethlehem, PA (US);
Raymond Nicholas Vrtis, Allentown, PA (US);
Eugene Joseph Karwacki, Jr., Orefield, PA (US);
Air Products and Chemicals, Inc., Allentown, PA (US);
Abstract
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming phase within a multiphasic film thereby forming a porous film. The pore-forming phase may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.