The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2008
Filed:
Aug. 07, 2006
En-chieh Wu, Kao-Hsiung Hsien, TW;
Hiew Watt NG, Kao-Hsiung, TW;
Hui-hung Chen, Kao-Hsiung, TW;
Chi-long Tsai, Kao-Hsiung, TW;
En-Chieh Wu, Kao-Hsiung Hsien, TW;
Hiew Watt Ng, Kao-Hsiung, TW;
Hui-Hung Chen, Kao-Hsiung, TW;
Chi-Long Tsai, Kao-Hsiung, TW;
Advanced Semiconductor Engineering, Inc., Kao-Hsiung, TW;
Abstract
A method for forming bumps is disclosed. First, a substrate having an adhesive, a barrier, and a wetting layer thereon is provided. Next, a patterned photoresist is formed on the wetting layer, in which the patterned photoresist includes at least one opening for exposing a portion of the wetting layer. Next, a solder is deposited in the opening, and a stripping process is performed to remove the patterned photoresist. Next, a first etchant is utilized to perform a first etching process for etching a portion of the wetting and barrier layers by utilizing the solder as a mask, in which the first etchant is selected from the group consisting of: sulfuric acid, phosphoric acid, ferric chloride, ammonium persulfate, and potassium monopersulfate. Next, a second etchant is utilized to perform a second etching process removing a portion of the adhesive layer, and a reflow process is performed to form a bump.