Hui-Hung Chen

Title: Innovations of Hui-Hung Chen in Semiconductor Technology

Introduction

Hui-Hung Chen is a notable inventor based in Kao-Hsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to etching processes.

Latest Patents

Hui-Hung Chen holds a patent for an "Etchant and method for forming bumps." This invention outlines a method for creating bumps on a substrate that includes an adhesive, a barrier, and a wetting layer. The process begins with the formation of a patterned photoresist on the wetting layer, which has openings to expose portions of the wetting layer. Solder is then deposited in these openings, followed by a stripping process to remove the photoresist. The invention utilizes a first etchant, selected from various acids, to etch the wetting and barrier layers using the solder as a mask. A second etchant is then employed to remove part of the adhesive layer, culminating in a reflow process that forms the bump.

Career Highlights

Hui-Hung Chen is currently associated with Advanced Semiconductor Engineering, Inc., where he applies his expertise in semiconductor manufacturing. His work has been instrumental in advancing the techniques used in the industry.

Collaborations

Hui-Hung Chen has collaborated with notable colleagues, including En-Chieh Wu and Hiew Watt Ng, contributing to various projects that enhance semiconductor technologies.

Conclusion

Hui-Hung Chen's innovative work in semiconductor technology, particularly his patent for forming bumps, showcases his significant contributions to the field. His collaboration with esteemed colleagues further emphasizes the impact of his work in advancing semiconductor manufacturing processes.