The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2008
Filed:
Nov. 09, 2006
Ji Soo Kim, Pleasanton, CA (US);
Sangheon Lee, Sunnyvale, CA (US);
Daehan Choi, Milpitas, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Ji Soo Kim, Pleasanton, CA (US);
Sangheon Lee, Sunnyvale, CA (US);
Daehan Choi, Milpitas, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for providing features in an etch layer with a memory region and a peripheral region is provided. A memory patterned mask is formed over a first sacrificial layer. A first set of sacrificial layer features is etched into the first sacrificial layer and a second sacrificial layer. Features of the first set of sacrificial layer features are filled with filler material. The first sacrificial layer is removed. The spaces are shrunk with a shrink sidewall deposition. A second set of sacrificial layer features is etched into the second sacrificial layer. The filler material and shrink sidewall deposition are removed. A peripheral patterned mask is formed over the memory region and peripheral region. The second sacrificial layer is etched through the peripheral patterned mask. The peripheral patterned mask is removed. Features are etched into the etch layer from the second sacrificial layer.