The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2008
Filed:
Dec. 23, 2005
Pramod Subramonium, Tigard, OR (US);
Zhiyuan Fang, West Linn, OR (US);
Jon Henri, West Linn, OR (US);
Pramod Subramonium, Tigard, OR (US);
Zhiyuan Fang, West Linn, OR (US);
Jon Henri, West Linn, OR (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A method for forming a PECVD deposited ashable hardmask (AHM) with less than 30% H content at a process temperature below 500° C., e.g., about 400° C. produces low H content hard masks having the property of high selectivity of the hard mask film to the underlying layers for successful integration of the film, and are suitable for use with 193 nm generation and below lithography schemes wherein high selectivity of the hard mask to the underlying layers is required. The low temperature, low H films are produced by use of a pulsed film hydrocarbon precursor plasma treatment that reduces the amount of hydrogen incorporated in the film and therefore drives down the etch rate of the hard mask thus increasing the selectivity. The lower temperature process also allows reduction of the overall thermal budget for a wafer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile