The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Jan. 30, 2004
Christopher Dennis Bencher, San Jose, CA (US);
Melvin Warren Montgomery, Camas, WA (US);
Alexander Buxbaum, Portland, OR (US);
Yung-hee Yvette Lee, San Jose, CA (US);
Jian Ding, San Jose, CA (US);
Gilad Almogy, Kiriat Ono, IL;
Wendy H. Yeh, Mountain View, CA (US);
Christopher Dennis Bencher, San Jose, CA (US);
Melvin Warren Montgomery, Camas, WA (US);
Alexander Buxbaum, Portland, OR (US);
Yung-Hee Yvette Lee, San Jose, CA (US);
Jian Ding, San Jose, CA (US);
Gilad Almogy, Kiriat Ono, IL;
Wendy H. Yeh, Mountain View, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
We have reduced the critical dimension bias for reticle fabrication. Pattern transfer to the radiation-blocking layer of the reticle substrate essentially depends upon use of a hard mask to which the pattern is transferred from a photoresist. The photoresist pull back which occurs during pattern transfer to the hard mask is minimalized. In addition, a hard mask material having anti-reflective properties which are matched to the reflective characteristics of the radiation-blocking layer enables a reduction in critical dimension size and an improvement in the pattern feature integrity in the hard mask itself. An anti-reflective hard mask layer left on the radiation-blocking layer provides functionality when the reticle is used in a semiconductor device manufacturing process.